Influence of Cr-substitution on the electrical properties of Fe1-xCrxSnSbO6

Abstract

Fe1􀀀xCrxSnSbO6 solid solution shows semiconducting behaviour with the activation energy decreasing from EA = 0:64 eV for x = 0:0 to EA = 0:32 eV for x = 1:0 in the intrinsic conductivity temperature region as well as the n-type conduction at room temperature. The I–V characteristics and the conductance G at 300 and 400 K showed symmetrical and nonlinear behavior in the voltage range (–100, 100 V) suggesting the electron emission over the potential barrier especially for the boundary compounds FeSnSbO6 and CrSnSbO6. These effects are discussed in the context of the energy gap Eg > 1:6 eV many times greater than the thermal energy kT.