Electrical resistivity and electronic structure of the Tb xGd 1-xNi 3 system

Abstract

In the paper the electric properties and electronic structure of the intermetallic TbxGd1􀀀xNi3 compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature (TC) and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in (T) have been analyzed. Moreover, the reduced form of the electrical resistivity Z(T 􀀀 T0) indicates a deviation from the linearity for x > 0:2. This kind of behaviour can be attributed to density of d states near by the Fermi level (EF) which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the in uence of Tb/Gd substitution on the electronic structure.