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Title: Stabilization of Kondo semiconductor state by Sb doping of CeNi1-delta Sn1+delta and the general criterion of its appearance
Authors: Spałek, J.
Ślebarski, Andrzej
Keywords: silnie skorelowane systemy elektronowe; ciężkie fermiony; mechanizmy rozpraszania; efekt Kondo; transformatory metal-izolator
Issue Date: 2008
Citation: Acta Physica Polonica A, Vol. 114, nr 1 (2008), s. 7-14
Abstract: Semimetallic off-stoichiometric CeNi1¡±Sn1+±¡xSbx system with ± ¼ 0:06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated with f-electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott{Hubbard insulators is stressed.
ISSN: 0587-4246
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