http://hdl.handle.net/20.500.12128/8327
Tytuł: | Stabilization of Kondo semiconductor state by Sb doping of CeNi1-delta Sn1+delta and the general criterion of its appearance |
Autor: | Spałek, J. Ślebarski, Andrzej |
Słowa kluczowe: | silnie skorelowane systemy elektronowe; ciężkie fermiony; mechanizmy rozpraszania; efekt Kondo; transformatory metal-izolator |
Data wydania: | 2008 |
Źródło: | Acta Physica Polonica A, Vol. 114, nr 1 (2008), s. 7-14 |
Abstrakt: | Semimetallic off-stoichiometric CeNi1¡±Sn1+±¡xSbx system with ± ¼ 0:06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated with f-electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott{Hubbard insulators is stressed. |
URI: | http://hdl.handle.net/20.500.12128/8327 |
ISSN: | 0587-4246 |
Pojawia się w kolekcji: | Artykuły (WNŚiT) |
Plik | Opis | Rozmiar | Format | |
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Spalek_Stabilization_of_Kondo_semiconductor.pdf | 737,89 kB | Adobe PDF | Przejrzyj / Otwórz |
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