Skip navigation

Please use this identifier to cite or link to this item:
Title: Properties of neutron doped multicrystalline silicon for solar cells
Authors: Pochrybniak, C.
Pytel, K.
Milczarek, J. J.
Jaroszewicz, J.
Lipiński, M.
Piotrowski, T.
Kansy, Jerzy
Keywords: mechanical alloying; silicon; milling time
Issue Date: 2008
Citation: Acta Physica Polonica A, Vol. 113, iss. 4 (2008), s. 1255-1265
Abstract: The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void - phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.
DOI: 10.12693/APhysPolA.113.1255
ISSN: 0587-4246
Appears in Collections:Artykuły (WNŚiT)

Files in This Item:
File Description SizeFormat 
Pochrybniak_Properties_of_neutron_doped.pdf525,84 kBAdobe PDFView/Open
Show full item record

Uznanie autorstwa - użycie niekomercyjne, bez utworów zależnych 3.0 Polska Creative Commons License Creative Commons