Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

Abstract

There is a considerable interest in type-II GaSb/InAs superlattice system due to several modern applications including infrared detectors. In these studies X-ray Photoelectron Spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) have been used to extensive characterization of the surface and interface of GaSb/InAs superlattice. Application of XPS and SE techniques provide precise information from topmost layers of structure and allow excluding presence of GaAs-type interfaces in GaSb/InAs superlattices. Simultaneously, these results indicate that InSb-type or GaInSb-type interfaces have been detected in the structures studied.