http://hdl.handle.net/20.500.12128/12318
Tytuł: | Origin of nanoscale incipient plasticity in GaAs and InP crystal |
Autor: | Chrobak, Dariusz Trębala, Michał Chrobak, Artur Nowak, Roman |
Słowa kluczowe: | Semiconductors; Nanoindentation |
Data wydania: | 2019 |
Źródło: | "Crystals (Basel)" 2019, iss. 12, art. no. 651 |
Abstrakt: | In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I ! GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant di erence in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration. |
URI: | http://hdl.handle.net/20.500.12128/12318 |
DOI: | 10.3390/cryst9120651 |
ISSN: | 2073-4352 |
Pojawia się w kolekcji: | Artykuły (WNŚiT) |
Plik | Opis | Rozmiar | Format | |
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Chrobak_Origin_of_nanoscale_incipient_plasticity.pdf | 1,22 MB | Adobe PDF | Przejrzyj / Otwórz |
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