DC pole | Wartość | Język |
dc.contributor.author | Balin, Katarzyna | - |
dc.contributor.author | Wojtyniak, Marcin | - |
dc.contributor.author | Weis, Mateusz | - |
dc.contributor.author | Zubko, Maciej | - |
dc.contributor.author | Wilk, Bartosz | - |
dc.contributor.author | Gu, Ruizhe | - |
dc.contributor.author | Ruello, Pascal | - |
dc.contributor.author | Szade, Jacek | - |
dc.date.accessioned | 2020-07-14T06:28:34Z | - |
dc.date.available | 2020-07-14T06:28:34Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Materials, Vol. 13 (2020), Art. No. 3111 | pl_PL |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/15145 | - |
dc.description.abstract | The impact of europium doping on the electronic and structural properties of the topological
insulator Bi2Te3 is studied in this paper. The crystallographic structure studied by electron di raction
and transmission microscopy confirms that grown by Molecular Beam Epitaxy (MBE) system film
with the Eu content of about 3% has a trigonal structure with relatively large monocrystalline grains.
The X-ray photoemission spectroscopy indicates that europium in Bi2Te3 matrix remains divalent
and substitutes bismuth in a Bi2Te3 matrix. An exceptional ratio of the photoemission 4d multiplet
components in Eu doped film was observed. However, some spatial inhomogeneity at the nanometer
scale is revealed. Firstly, local conductivity measurements indicate that the surface conductivity
is inhomogeneous and is correlated with a topographic image revealing possible coexistence of
conducting surface states with insulating regions. Secondly, Time of Flight Secondary Ion Mass
Spectrometry (TOF-SIMS) depth-profiling also shows partial chemical segregation. Such in-depth
inhomogeneity has an impact on the lattice dynamics (phonon lifetime) evaluated by femtosecond
spectroscopy. This unprecedented set of experimental investigations provides important insights for
optimizing the process of growth of high-quality Eu-doped thin films of a Bi2Te3 topological insulator.
Understanding such complex behaviors at the nanoscale level is a necessary step before considering
topological insulator thin films as a component of innovative devices. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/pl/ | * |
dc.subject | topological insulators | pl_PL |
dc.subject | Bi2Te3 thin films | pl_PL |
dc.subject | doping | pl_PL |
dc.subject | electronic structure | pl_PL |
dc.subject | europium valence | pl_PL |
dc.subject | electron-phonon interaction | pl_PL |
dc.title | Europium Doping Impact on the Properties of MBE Grown Bi2Te3 Thin Film | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
dc.identifier.doi | 10.3390/ma13143111 | - |
Pojawia się w kolekcji: | Artykuły (WNŚiT)
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