DC pole | Wartość | Język |
dc.contributor.author | Papis-Polakowska, Ewa | - |
dc.contributor.author | Kaniewski, Janusz | - |
dc.contributor.author | Jureńczyk, Jarosław | - |
dc.contributor.author | Jasik, Agata | - |
dc.contributor.author | Czuba, Krzysztof | - |
dc.contributor.author | Walkiewicz, A.E. | - |
dc.contributor.author | Szade, Jacek | - |
dc.date.accessioned | 2018-04-23T05:58:42Z | - |
dc.date.available | 2018-04-23T05:58:42Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | AIP Advances, 2016, iss. 5, art. no 055206 | pl_PL |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/3015 | - |
dc.description.abstract | The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/pl/ | * |
dc.subject | Atomic force microscopy | pl_PL |
dc.subject | Gallium alloys | pl_PL |
dc.subject | Monolayers | pl_PL |
dc.subject | Organic polymers | pl_PL |
dc.subject | Passivation | pl_PL |
dc.subject | Photodetectors | pl_PL |
dc.subject | Photons | pl_PL |
dc.subject | Self assembly | pl_PL |
dc.subject | X ray photoelectron spectroscopy | pl_PL |
dc.title | Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
dc.identifier.doi | 10.1063/1.4949754 | - |
Pojawia się w kolekcji: | Artykuły (WNŚiT)
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