DC pole | Wartość | Język |
dc.contributor.author | Majtyka, A. | - |
dc.contributor.author | Nowak, R. | - |
dc.contributor.author | Chrobak, Dariusz | - |
dc.date.accessioned | 2019-01-31T18:45:14Z | - |
dc.date.available | 2019-01-31T18:45:14Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Acta Physica Polonica. A, Vol. 130, no. 4 (2016), s. 1127-1130 | pl_PL |
dc.identifier.issn | 0587-4246 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/8064 | - |
dc.description.abstract | Effect of silicon doping on the elastic–plastic transition of GaAs crystal is demonstrated by results of nanoindentations
and ab initio simulations. The performed experiments show that an increase of silicon concentration
causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio
calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as
the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the
effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa-Użycie niekomercyjne-Bez utworów zależnych 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/pl/ | * |
dc.subject | gallium arsenide | pl_PL |
dc.subject | phase transformations | pl_PL |
dc.subject | nanoindentation | pl_PL |
dc.title | Nanoscale deformation of GaAs affected by silicon doping | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
dc.relation.journal | Acta Physica Polonica. A | pl_PL |
dc.identifier.doi | 10.12693/APhysPolA.130.1127 | - |
Pojawia się w kolekcji: | Artykuły (WNŚiT)
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