DC pole | Wartość | Język |
dc.contributor.author | Majtyka, A. | - |
dc.contributor.author | Trębala, M. | - |
dc.contributor.author | Tukiainen, A. | - |
dc.contributor.author | Chrobak, Dariusz | - |
dc.contributor.author | Borgieł, Władysław | - |
dc.contributor.author | Raisanen, J. | - |
dc.contributor.author | Nowak, R. | - |
dc.date.accessioned | 2019-02-01T09:58:36Z | - |
dc.date.available | 2019-02-01T09:58:36Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Acta Physica Polonica. A, Vol. 130, no. 4 (2016), s. 1131-1133 | pl_PL |
dc.identifier.issn | 0587-4246 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/8072 | - |
dc.description.abstract | The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular
beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with
sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83:07 1:78 GPa), hardness
(H = 5:19 0:25 GPa) and “true hardness” (HT = 5:73 0:04 GPa). The registered pop-in event which indicates
the elastic–plastic transition in GaSb crystal points towards the corresponding yield strength ( Y = 3:8 0:1 GPa).
The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa-Użycie niekomercyjne-Bez utworów zależnych 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/pl/ | * |
dc.subject | phase transformations | pl_PL |
dc.subject | gallium antimonide | pl_PL |
dc.title | Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by noindentation | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
dc.relation.journal | Acta Physica Polonica. A | pl_PL |
dc.identifier.doi | 10.12693/APhysPolA.130.1131 | - |
Pojawia się w kolekcji: | Artykuły (WNŚiT)
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