DC pole | Wartość | Język |
dc.contributor.author | Morkowski, J. A. | - |
dc.contributor.author | Szajek, A. | - |
dc.contributor.author | Chełkowska, Grażyna | - |
dc.contributor.author | Bajorek, Anna | - |
dc.contributor.author | Troć, R. | - |
dc.date.accessioned | 2019-02-20T06:58:32Z | - |
dc.date.available | 2019-02-20T06:58:32Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | Acta Physica Polonica A, Vol. 115, nr 5 (2009), s. 935-940 | pl_PL |
dc.identifier.issn | 0587-4246 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/8238 | - |
dc.description.abstract | The electronic structures of the half-Heusler isostructural compounds TiPtSn, ZrPtSn and HfPtSn were
calculated and measured applying the X-ray photoemission spectroscopy. The (Ti, Zr, Hf)PtSn compounds
have gaps between the occupied valence band and the empty conduction band, calculated as about 0.75,
1.12, and 1.09 eV, respectively. The calculations were done by the full-potential local orbitals method in the
framework of the local spin-density approximation and partly also by the full-potential linear mu±n-tin orbitals
method by the LmtART code. Experimental X-ray photoemission spectra were measured using photons of en-
ergy of 1486.6 eV. The experimental and calculated spectra match quite well except a small shift in the energy scale. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa-Użycie niekomercyjne-Bez utworów zależnych 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/pl/ | * |
dc.subject | gęstość elektronowa stanów | pl_PL |
dc.subject | struktura pasmowa krystalicznych ciał stałych | pl_PL |
dc.subject | spektroskopia elektronowa | pl_PL |
dc.title | Electronic Structure and X-Ray Photoemission Spectra of MPtSn (M = Ti, Zr, Hf) | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
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