DC pole | Wartość | Język |
dc.contributor.author | Kruczek, Magdalena | - |
dc.contributor.author | Talik, Ewa | - |
dc.contributor.author | Kusz, Joachim | - |
dc.contributor.author | Sakowska, H. | - |
dc.contributor.author | Świrkowicz, M. | - |
dc.contributor.author | Węglarz, H. | - |
dc.date.accessioned | 2019-02-20T10:45:17Z | - |
dc.date.available | 2019-02-20T10:45:17Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | Acta Physica Polonica A, Vol. 115, nr 1 (2009), s. 209-212 | pl_PL |
dc.identifier.issn | 0587-4246 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/8244 | - |
dc.description.abstract | Y3Al5O12 (YAG) single crystals doped with vanadium ions (V3+) were obtained by the Czochralski method.
The X-ray photoelectron spectra of YAG:V annealed in reducing atmospheres: H2, vacuum and H2 + vacuum
are presented and compared with the spectra of the YAG ceramics. The X-ray photoelectron spectra showed
that the vanadium dopant concentration in YAG:V crystals is lower than a nominal one. For the \as grown"
YAG:2.8at.%V crystal vanadium exists in the mixed valence state. The increase in lattice parameters for the
samples annealed in hydrogen was found. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa-Użycie niekomercyjne-Bez utworów zależnych 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/pl/ | * |
dc.subject | widma fotoemisyjne i fotoelektronowe | pl_PL |
dc.subject | Czyste powierzchnie metalowe, półprzewodnikowe i izolacyjne | pl_PL |
dc.subject | struktura elektroniczna | pl_PL |
dc.subject | kryształy | pl_PL |
dc.title | Electronic Structure of Y3Al5O12:V Single Crystals, Comparison with Sintered Ceramics | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
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