DC pole | Wartość | Język |
dc.contributor.author | Spałek, J. | - |
dc.contributor.author | Ślebarski, Andrzej | - |
dc.date.accessioned | 2019-02-27T10:57:39Z | - |
dc.date.available | 2019-02-27T10:57:39Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Acta Physica Polonica A, Vol. 114, nr 1 (2008), s. 7-14 | pl_PL |
dc.identifier.issn | 0587-4246 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/8327 | - |
dc.description.abstract | Semimetallic off-stoichiometric CeNi1¡±Sn1+±¡xSbx system with ± ¼ 0:06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated
with f-electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott{Hubbard insulators is stressed. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa-Użycie niekomercyjne-Bez utworów zależnych 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/pl/ | * |
dc.subject | silnie skorelowane systemy elektronowe | pl_PL |
dc.subject | ciężkie fermiony | pl_PL |
dc.subject | mechanizmy rozpraszania | pl_PL |
dc.subject | efekt Kondo | pl_PL |
dc.subject | transformatory metal-izolator | pl_PL |
dc.title | Stabilization of Kondo semiconductor state by Sb doping of CeNi1-delta Sn1+delta and the general criterion of its appearance | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
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