DC pole | Wartość | Język |
dc.contributor.author | Porowski, S. | - |
dc.contributor.author | Sadovyi, B. | - |
dc.contributor.author | Gierlotka, S. | - |
dc.contributor.author | Rzoska, Sylwester | - |
dc.contributor.author | Grzegory, I. | - |
dc.contributor.author | Petrusha, I. | - |
dc.contributor.author | Turkevich, V. | - |
dc.contributor.author | Stratiichuk, D. | - |
dc.date.accessioned | 2019-08-26T09:32:39Z | - |
dc.date.available | 2019-08-26T09:32:39Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | "Journal of Physics and Chemistry of Solids" Vol. 85 (2015), s. 138-143 | pl_PL |
dc.identifier.issn | 0022-3697 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.12128/10606 | - |
dc.description.abstract | Gallium nitride (GaN) is considered to be one of the most important semiconductors nowadays. In this
report a solution of the long standing puzzle regarding GaN decomposition and melting under high
pressure and high temperaturę is presented.This includes the discussion of results obtained so far. The
possibility of a consistent parameterisation of pressure (P) evolution of the melting temperaturę (Tm) in
basic semiconductors (GaN, germanium, silicon…), independently from signs of dTm/dP is alsopresented. | pl_PL |
dc.language.iso | en | pl_PL |
dc.rights | Uznanie autorstwa-Użycie niekomercyjne-Bez utworów zależnych 3.0 Polska | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/pl/ | * |
dc.subject | Semiconductors | pl_PL |
dc.subject | High pressures | pl_PL |
dc.subject | Phase equilibria | pl_PL |
dc.subject | Phase transitions | pl_PL |
dc.subject | Crystal growth | pl_PL |
dc.title | The challenge of decomposition and melting of gallium nitride under high pressure and high temperature | pl_PL |
dc.type | info:eu-repo/semantics/article | pl_PL |
dc.identifier.doi | 10.1016/j.jpcs.2015.05.006 | - |
Pojawia się w kolekcji: | Artykuły (WNŚiT)
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