http://hdl.handle.net/20.500.12128/10606
Tytuł: | The challenge of decomposition and melting of gallium nitride under high pressure and high temperature |
Autor: | Porowski, S. Sadovyi, B. Gierlotka, S. Rzoska, Sylwester Grzegory, I. Petrusha, I. Turkevich, V. Stratiichuk, D. |
Słowa kluczowe: | Semiconductors; High pressures; Phase equilibria; Phase transitions; Crystal growth |
Data wydania: | 2015 |
Źródło: | "Journal of Physics and Chemistry of Solids" Vol. 85 (2015), s. 138-143 |
Abstrakt: | Gallium nitride (GaN) is considered to be one of the most important semiconductors nowadays. In this report a solution of the long standing puzzle regarding GaN decomposition and melting under high pressure and high temperaturę is presented.This includes the discussion of results obtained so far. The possibility of a consistent parameterisation of pressure (P) evolution of the melting temperaturę (Tm) in basic semiconductors (GaN, germanium, silicon…), independently from signs of dTm/dP is alsopresented. |
URI: | http://hdl.handle.net/20.500.12128/10606 |
DOI: | 10.1016/j.jpcs.2015.05.006 |
ISSN: | 0022-3697 |
Pojawia się w kolekcji: | Artykuły (WNŚiT) |
Plik | Opis | Rozmiar | Format | |
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Porowski_Rzoska_the_challenge_of_decomposition.pdf | 2,47 MB | Adobe PDF | Przejrzyj / Otwórz |
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