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http://hdl.handle.net/20.500.12128/3015| Tytuł: | Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol |
| Autor: | Papis-Polakowska, Ewa Kaniewski, Janusz Jureńczyk, Jarosław Jasik, Agata Czuba, Krzysztof Walkiewicz, A.E. Szade, Jacek |
| Słowa kluczowe: | Atomic force microscopy; Gallium alloys; Monolayers; Organic polymers; Passivation; Photodetectors; Photons; Self assembly; X ray photoelectron spectroscopy |
| Data wydania: | 2016 |
| Źródło: | AIP Advances, 2016, iss. 5, art. no 055206 |
| Abstrakt: | The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector. |
| URI: | http://hdl.handle.net/20.500.12128/3015 |
| DOI: | 10.1063/1.4949754 |
| ISSN: | 2158-3226 |
| Pojawia się w kolekcji: | Artykuły (WNŚiT) |
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| Papis-Polakowska_Surface_passivation_of_100_GaSb_using_self-assembled_monolayers.pdf | 3,8 MB | Adobe PDF | Przejrzyj / Otwórz |
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