| Abstrakt: | The development of the semiconductor industry and the progress of research in the field of
solid state is associated with the search for technologically advanced materials. The problem of
designing complex materials can be considered in two ways. The first method consists in creating from
scratch materials consisting of several or even several dozen components, but in this case, we
encounter difficulties resulting from the correlation between them. The second method is mainly
based on designing materials with a low degree of complexity with the possibility of expanding with
other components that allow to obtain more complex systems, but difficult to interpret in terms of
their real structure. The mentioned paths are supported by literature analysis and are equivalent.
The first method has the characteristics of a certain randomness, while the second way allows gradual
exploration of a given issue and subject, which in effect gives us a more accurate and better knowledge
about the scientific problem.
Disilicides are materials with a wide range of applications. We meet with them during
technological processes related to the mechanical and thermal treatment of other materials, as well
as that materials are the basic component of electronic circuits. Disilicides can be divided into three
groups. The first group are metallic materials, e.g. CoSi₂, NiSi₂ and TiSi₂ . The second group are materials
having semiconductor properties, e.g. CrSi₂, FeSi₂, and the third group are high-temperature materials:
WSi₂, MoSi₂, TaSi₂ . Disilicides are also used in other applications: anti-corrosion and protective
coatings, passivating materials or components of composite materials. As you can see, these are
versatile materials, and the only limitation of their application are economic issues.
This doctoral thesis describes the process of obtaining massive singlecrystals of Co₁₋ₓNiₓSi₂ solid
solutions, where x = 0.10; 0.25 and 0.50 by Bridgman and Czochralski techniques. The effect of the
technological work was fabrication of single crystals with established chemical compositions.
A comparative identification of the microstructure t of single crystals with the same compositions
obtained by the Bridgman and Czochralski technique with the aid of optical and electron techniques
was carried out. In order to identify the obtained materials, X-ray quality phase analysis and X-ray
microanalysis were performed. Using the Laue technique, the growth directions of the obtained single
crystals were oriented. A preliminary analysis of the mechanical properties of the obtained materials
was carried out by measuring the microhardness. In order to identify the real structure of the obtained
singlecrystals of Co₁₋ₓNiₓSi₂ solid solutions, temperature studies were carried out. The specific
resistance ρ(T), S(T) and specific C(T) heat were measured in the temperature range from 4.2K to room
temperature. All obtained results were compared with available literature data. |