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Title: Nanoscale deformation of GaAs affected by silicon doping
Authors: Majtyka, A.
Nowak, R.
Chrobak, Dariusz
Keywords: gallium arsenide; phase transformations; nanoindentation
Issue Date: 2016
Citation: Acta Physica Polonica. A, Vol. 130, no. 4 (2016), s. 1127-1130
Abstract: Effect of silicon doping on the elastic–plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
DOI: 10.12693/APhysPolA.130.1127
ISSN: 0587-4246
Appears in Collections:Artykuły (WNŚiT)

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