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Title: Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by noindentation
Authors: Majtyka, A.
Trębala, M.
Tukiainen, A.
Chrobak, Dariusz
Borgieł, Władysław
Raisanen, J.
Nowak, R.
Keywords: phase transformations; gallium antimonide
Issue Date: 2016
Citation: Acta Physica Polonica. A, Vol. 130, no. 4 (2016), s. 1131-1133
Abstract: The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83:07 1:78 GPa), hardness (H = 5:19 0:25 GPa) and “true hardness” (HT = 5:73 0:04 GPa). The registered pop-in event which indicates the elastic–plastic transition in GaSb crystal points towards the corresponding yield strength ( Y = 3:8 0:1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.
DOI: 10.12693/APhysPolA.130.1131
ISSN: 0587-4246
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