Doped carrier formulation of the t-J model : Monte Carlo study of the anisotropic case

Abstract

We derive a doped carrier representation of the t-J model Hamiltonian. Within this approach the t-J model is described in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. This representation of the t{J Hamiltonian is very convenient for underdoped systems since close to half-filling it allows for a controlled treatment of the crucial constraint of no doubly occupied sites. When neglecting the transverse spin-spin interaction, the effective Hamiltonian can be investigated with classical Monte Carlo simulations. We discuss the results obtained for systems consisting of several hundred lattice sites.