Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12128/9310| Title: | Properties of neutron doped multicrystalline silicon for solar cells |
| Authors: | Pochrybniak, C. Pytel, K. Milczarek, J. J. Jaroszewicz, J. Lipiński, M. Piotrowski, T. Kansy, Jerzy |
| Keywords: | mechanical alloying; silicon; milling time |
| Issue Date: | 2008 |
| Citation: | Acta Physica Polonica A, Vol. 113, iss. 4 (2008), s. 1255-1265 |
| Abstract: | The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void - phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed. |
| URI: | http://hdl.handle.net/20.500.12128/9310 |
| DOI: | 10.12693/APhysPolA.113.1255 |
| ISSN: | 0587-4246 |
| Appears in Collections: | Artykuły (WNŚiT) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Pochrybniak_Properties_of_neutron_doped.pdf | 525,84 kB | Adobe PDF | View/Open |
Uznanie autorstwa - użycie niekomercyjne, bez utworów zależnych 3.0 Polska Creative Commons License
